Microfabricated strained substrates for Ge epitaxial growth
نویسندگان
چکیده
منابع مشابه
Simulation of Boron Diffusion in Strained Sil-,Ge, Epitaxial Layers
This paper describes a simple and accurate model for boron diffusion in SiGe that was successfully implemented in TAURUS (PMEI). The comparison of the Si,.,Ge, samples to the Si samples after rapid thermal and furnace annealing revealed a retarded B diffusion inside the strained Sil.,Ge, layers. The influence of the Ge content on the dopant diffusion was also measured and simulated, demonstrati...
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Dislocation interactions play a critical role in plasticity and heteroepitaxial strain relaxation. We use real time transmission electron microscopy observations of the interaction between threading and misfit dislocations in SiGe heterostructures to investigate interactions quantitatively. In addition to the expected long-range blocking of threading segments, we observe a new short-range mecha...
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Experimental observations of the growth of more than one monolayer of Ge on Si(001) show a progression of effects beyond the (2×N) reconstruction which is seen at submonolayer coverages: a reduction in the value of N with coverage; formation of straight trenches of missing dimer vacancies; and formation of the (M × N) " patch " structure. We present tight binding calculations which investigate ...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2005
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1894579